Unlike other packages where performance is often limited by internal bond wires, LFPAK88 devices employ the copper-clip and solder die attach construction, resulting in low electrical & thermal resistance, good current spreading and heat dispersal. In addition, the thermal mass of the copper-clip also reduces hot-spot formation which results in improved avalanche energy (Eas) and linear-mode (SOA) performance. The combination of high continuous and demonstrated current rating ID_(max) of 425 A and low RDS_(on) of 0.7 mΩ in a smaller package size, presents market-leading power density of up to 48 times when compared to D²PAK devices.

Finally, the LFPAK88, with its low-stress gull wing leads is a more rugged and thermally robust package, delivering reliability levels more than two times better than is required by AEC-Q101. Comments Neil Massey, Product Manager at Nexperia: “Combining the LFPAK88 with our silicon technology results in MOSFETs that deliver 48x the power density of D²PAK. This proves that Nexperia, the inventor of the LFPAK, is still the leader in this technology.”

LFPAK88 MOSFETs are available in both automotive-qualified (BUK) and industrial (PSMN) grades. Automotive applications include braking, power steering, reverse battery protection and DC-DC converters, where the space-savings that can be achieved by using the devices is particularly useful in dual-redundant circuits. Industrial applications include battery-powered power tools, professional power supplies, and telecoms infrastructure equipment.  

More information on the new 40V LFPAK88 MOSFETs, including product specs and datasheets is available at www.nexperia.com/lfpak88.